PART |
Description |
Maker |
BUK6E3R4-40C |
N-channel TrenchMOS intermediate level FET 100 A, 40 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
NXP Semiconductors N.V.
|
BUK654R8-40C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK653R5-55C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK653R7-30C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK652R3-40C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors
|
BUK6C3R3-75C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors
|
BUK6209-30C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors N.V.
|
BUK652R7-30C |
N-channel TrenchMOS intermediate level FET
|
Philips Semiconductors
|
BUK6E3R2-55C |
N-channel TrenchMOS intermediate level FET
|
NXP Semiconductors
|
M74HC352B1R M74HC353M1R M54HC352 M54HC352B1R M54HC |
HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATE OUTPUT(INV.) HC352: DUAL 4 CHANNEL MULTIPLEXER(INV.) HC353: DUAL 4 CHANNEL MULTIPLEXER 3 STATEOUTPUTINV. HC352: DUAL 4 CHANNEL MULTIPLEXERINV. 12-Bit, 2.5 us Dual DAC, Serial Input, Programmable Settling Time, M temperature 8-CDIP -55 to 125 VDSL Codec 80-LQFP -40 to 85 12-Bit, Single Channel DAC, Parallel, Voltage Out, Low Power, Asynchronous Update 20-SOIC 0 to 70
|
SGS Thomson Microelectronics ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导
|
OM6215SS OM6214SS OM6216SS OM6217SS |
30 A, 100 V, 0.065 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET TWO POWER MOSFETS IN HERMETIC ISOLATED SIP PACKAGE 100V Dual N-Channel MOSFET in a S-6 package 400V Dual N-Channel MOSFET in a S-6 package 500V Dual N-Channel MOSFET in a S-6 package 200V Dual N-Channel MOSFET in a S-6 package
|
List of Unclassifed Manufacturers ETC International Rectifier
|
FDD8426H |
40V Dual N & P-Channel PowerTrenchMOSFET Dual N & P-Channel PowerTrench垄莽 MOSFET N-Channel: 40 V, 12 A, 12 m楼? P-Channel: -40 V, -10 A, 17 m楼? Dual N & P-Channel PowerTrench? MOSFET N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ
|
Fairchild Semiconductor
|